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| (R) MJE13007 SILICON NPN SWITCHING TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS s SWITCHING REGULATORS s MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220 plastic package. It is are inteded for use in motor control, switching regulators etc. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM IE I EM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Emitter Current Emitter Peak Current Total Dissipation at T c 25 C Storage Temperature Max. O perating Junction Temperature o Value 700 400 9 8 16 4 8 12 24 80 -65 to 150 150 Uni t V V V A A A A A A W o o C C June 1998 1/4 MJE13007 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 1.56 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEV V CE = rated V CEV V EB = 9 V I C = 10 mA IC IC IC IC = = = = 2 5 8 5 A A A A IB IB IB IB = = = = 0.4 A 1A 2A 1A 400 1 1.5 3 2 1.2 1.6 1.5 8 6 f = 1 MHz f = 0.1 MHz 4 110 40 30 MHz pF T c = 100 C o Min. Typ . Max. 1 5 1 Un it mA mA mA V V V V V V V V V CEO(sus ) Collector-Emitter Sustaining Voltage V CE(sat ) Collector-Emitter Saturation Voltage Tc = 100 oC V BE(s at) Base-Emitter Saturation Voltage DC Current G ain Transition F requency Output Capacitance IC = 2 A IC = 5 A IC = 5 A IC = 2 A IC = 5 A I C = 0.5 A IE = 0 IB = 0.4 A IB = 1 A IB = 1 A V CE = 5 V V CE = 5 V VCE = 10 V V CB = 10 V Tc = 100 C o h FE fT C CBO RESISTIVE LOAD Symb ol t on ts tf Parameter Turn-on T ime St orage Time Fall Time Test Co nditio ns V CC = 125 V I C = 5 A I B1 = -I B2 = 1 A t p = 25 s Duty Cycle < 1% Min . Typ. Max. 0.7 3 0.7 Unit s ms ms INDUCTIVE LOAD Symb ol tf tf Parameter Fall Time Fall Time Test Co nditio ns V CC = 125 V IC = 5 A I B1 = 1 A t p = 25 s Duty Cycle < 1% V CC = 125 V IC = 5 A I B1 = 1 A t p = 25 s Duty Cycle < 1% T c = 100 o C Min . Typ. Max. 0.3 0.6 Unit s s * Pulsed: Pulse duration = 300 s, duty cycle 2 % 2/4 MJE13007 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 3/4 MJE13007 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 4/4 |
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